| 型号 | IMW120R220M1HXKSA1 |
| 制造商 | Infineon Technologies |
| Mfr | Infineon Technologies |
| 系列 | CoolSiC™ |
| 包装 | Tube |
| 零件状态 | Active |
| FET 类型 | N-Channel |
| 技术 | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drive Voltage (最大 Rds On, Min Rds On) | 15V, 18V |
| Rds On (最大) @ Id, Vgs | 286mOhm @ 4A, 18V |
| Vgs(th) (最大) @ Id | 5.7V @ 1.6mA |
| Gate Charge (Qg) (最大) @ Vgs | 8.5nC @ 18V |
| Vgs (最大) | +23V, -7V |
| 输入 点容 (Ciss) (最大) @ Vds | 289pF @ 800V |
| FET Feature | - |
| 功率 Dissipation (最大) | 75W (Tc) |
| 工作温度 | -55°C ~ 175°C (TJ) |
| 安装类型 | Through Hole |
| 供应商器件封装 | PG-TO247-3-41 |
| 封装/外壳 | TO-247-3 |
